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 2 www.fairchildsemi.com FFPF08S60S — STEALTH? II Diode Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Pulse : Test Pulse width = 300 μs, Duty Cycle = 2% Test Circuit and Waveforms Parameter Conditions Min. Typ. Max Unit VF1 IF = 8 A IF = 8 A TC = 25 °C TC = 125 °C - - 2.1 1.6 2.6 - V V IR1 VR = 600 V VR = 600 V TC = 25 ° C TC = 125 °C - - - - 100 500 μA μA trr IF =1 A, diF/dt = 100 A/μs, V R= 30 V TC = 25 °C- - 25 ns trr Irr S factor Qrr IF =8 A, diF/dt = 200 A/μs, V R = 390 V TC = 25 °C- 19 - 2.2 - - 0.6 21 30 - - - ns A nC trr Irr S factor Qrr IF =8 A, diF/dt = 200 A/μs, V R= 390 V TC = 125 °C- - - - 58 4.3 1.3 125 - - - - ns A nC WAVL Avalanche Energy (L = 40 mH) 20 - - mJ ?2007 Fairchild Semiconductor Cor poration FFPF08S60S Rev. C1 RG L V - DD MOSFET CURRENT SENSE DUT VGE t1 t2 VGE AMPLITUDE AND t1 AND t2 CONTROL IF RG CO NTROL diF/dt + dt diF IF trr ta tb 0 IRM 0.25 IRM DUT CURRENT SENSE + LR VDD I = 0.5A L = 80mH R < 0.1? VDD = 200V EAV L = 1/2LI2 [V R(AVL)/(VR(AVL) - V DD)] Q1 = IGBT (BVCES > DUT V R(AVL)) - VDD Q1 IV t0 t1 t2 IL VAV L t IL Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform |